| PART |
Description |
Maker |
| CXK591000TM/YM/M-10LL CXK591000TM/YM/M-70LL CXK591 |
131072-word x 9-bit High Speed CMOS Static RAM
131072-word x 9-bit High Speed CMOS Static RAM 131072字9位高速CMOS静态RAM
|
SONY
Vishay Intertechnology, Inc.
|
| HN28F101 HN28F101CP-12 HN28F101CP-15 HN28F101CP-20 |
131072-word ?? 8-bit CMOS Flash Memory
|
ETC
|
| M5M51008BFP-10VL M5M51008BFP-10VLL M5M51008BFP-12V |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
|
Mitsubishi Electric Semiconductor
|
| M5M27C202JK-10 M5M27C202JK-12 M5M27C202JK-15 M5M27 |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M5M51008KR-10LL-I M5M51008KR-70LL M5M51008KR-55LL |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
From old datasheet system
|
Mitsubishi
|
| HM628128LP |
131072-word x 8-bit High Speed CMOS Static RAM
|
Hitachi,Ltd.
|
| CXK5B81020JM-12 CXK5B81020J/TM-12 |
131072-word x 8-bit High Speed Bi-CMOS Static RAM
131072-word 8-bit High Speed Bi-CMOS Static RAM
|
Sony Corporation
|
| HN27C101AFP HN27C101AFP-12 |
N/A
131072-word x 8-bit CMOS One Time Electrically Programmable ROM
|
Hitachi Semiconductor
|
| M6MGT331S8BKT M6MGB331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| TC551001CFI-70 TC551001CFI-70L TC551001CFI-85 TC55 |
131,072 WORD x 8 BIT STATIC RAM 131072字8位静态RAM
131072 WORD x 8 BIT STATIC RAM
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
